THE PREPARATION OF ZnO AND SrCu2O2 PRECURSORS AND THE INTEGRATION OF THIN FILMS VIA SPIN-ON PROCESS

ABSTRACT For the development of silicon compatible opto-electronic devices, we have developed a p-n heterojunction structure device using p-type SrCu2O2 integrated with n-type ZnO. Thin films were produced via spin-on process. Highly C-orientation ZnO thin films have been obtained. The effect of post deposition annealing ambient and temperatures on the photo luminescent properties of ZnO thin films have been investigated. For the deposition of SrCu2O2 thin films, we have developed stable spin-on precursors for both SrCu2O2 and Ca doped SrCu2O2 film deposition, and produced SrCu2O2 films through both low and high temperature processes. In the low temperature process, we established a two step anneal process and obtained SrCu2O2 films with strong Cu(I)2O phase. The first annealing step is at 400°C for five minutes in forming gas, from which XRD results indicated presence of the Cu(0) phase. During the second anneal step, a controlled oxygen pulse was applied with constant nitrogen gas flow at 400°C which ox...