Photoluminescence study of carrier dynamics and recombination in a strained InGaAsP/InP multiple-quantum-well structure

Carrier transport and recombination in a strained InGaAsP/InP multiple-quantum-well structure emitting at 1.55 μm are investigated experimentally and theoretically using both time-resolved photoluminescence and Monte Carlo simulations. A method for including carrier recombination in a Monte Carlo simulation is described. The calculated spectra are in good agreement with the experimental results. They show that nonradiative recombination is the principal recombination process in the first 100 ps and that the screened electron–phonon interactions are responsible for the high luminescence from the quantum-well higher-energy levels.