High resolution S(Q, E) measurement on g-SiO2<

Abstract High energy resolution S ( Q , E ) M measurements on g - SiO 2 clarified the details of the VDOS, showing additionally a broad hump at 69 meV and weak sharp peaks at 63 meV and 77 meV. The paper discusses the Q dependence of the VDOS using a model and presents a dynamical pair correlation function.