Melting process and the size depression of the eutectic temperature in Ag/Ge and Ge/Ag/Ge layered films

Abstract Melting temperature is one of the principal parameters of phase equilibria thermodynamics and its value affects the majority of materials properties. Despite previous studies, the fundamental mechanisms of interphase interactions at melting in two-component nanomaterials are under consideration. We address these issues in a comprehensive experimental study of phase transformations in nanosized Ag-Ge eutectic system by means of in situ TEM techniques. The Ge/Ag/Ge and Ag/Ge layered films with thin Ag layer (1–50 nm) on top or in-between amorphous Ge films have been used as a model of a binary system of variable size. Morphology, crystalline structure and composition of Ag-Ge films have been examined in situ and ex situ by advanced (S)TEM techniques, the eutectic temperature (T E ) and the Ge crystallization temperature have been measured as a function of Ag film thickness. A few hundred degrees lowering of T E with the film thickness reduction has been registered. Complex changes of the Ge/Ag/Ge films morphology below the eutectic temperature driven by Ag-mediated crystallization of amorphous Ge have been observed and related to the formation of metastable (liquid and/or Ag-Ge hcp) phases at the metal-semiconductor interface at 250 °C already.