Synthesis, characterization and printing application of alkylated indolo[3,2-b]carbazoles

Abstract The synthesis, characterization, and field-effect transistor (FET) properties of new alkylated indolo[3,2-b]carbazole (ICz) based materials are reported. Dialkyl substitution at the 2,8-positions of the ICz core structure do not affect strong N H⋯ π interactions, thus favoring a herringbone packing motif. OFET devices fabricated by compounds of this substitution pattern displayed a charge carrier mobility of ∼10 −2  cm 2  V s −1 . These interactions are suppressed when introducing substituents at the 5,11-positions, resulting in greatly enhanced solubility. A solution processable ICz derivative was finally used in a newly developed pneumatic printing setup to yield a crystalline film with aligned crystals along the printing direction.