Life Test of 30 mW GaAlAs TAL Laser Grown by OMVPE

Operating life data taken at 70 and 80°C at an output power level of 30 mW cw from one facet are presented for a protonisolated stripe, (Ga, Al)As Thin Active Layer DH laser grown by Organo-Metallic Vapor Phase Exitaxy, and mounted epi-side up on a Si submount with Sn solder. Median life of 450 h at 80°C ambient and 2500 h at 70°C ambient was observed. The failure mode is gradual increase of threshold current combined with decrease of the kink power level below the operating point.