Characteristics of MOS capacitors of BF/sub 2/ or B implanted polysilicon gate with and without POCl/sub 3/ co-doped

The characteristics of BF/sub 2/- or B-implanted polysilicon gate MOS capacitors with and without POCl/sub 3/ codoped were studied. It was found that the gate oxide thickness was increased very significantly with the number of high-temperature thermal cycles for BF/sub 2/-implanted polysilicon MOS capacitors, but this was not true for POCl/sub 3/-codoped polysilicon MOS capacitors. A model that interprets this phenomenon well was developed using the results of SIMS (secondary ion ion mass spectrometry) measurements. >