Fabrication of double-metal AC-coupled silicon microstrip detectors

Abstract The 8 × 4 cm 2 single-sided double-metal p + -i-n + silicon microstrip detectors (SMDs) with coupling capacitors and polysilicon bias resistors were fabricated with the newly developed double-metal processing techniques with different inter-metal dielectrics. The results of using these processing techniques and some features of double-metal process are reported. The characteristics of polysilicon bias resistors obtained with BF 2 ion-implantations having various doses and their effects on the leakage currents of SMDs have also been studied.