Analytical Modeling of DG-MOSFET in Subthreshold Regime by Green’s Function Approach

In this paper, we have developed an analytical model of double gate MOSFET using Green’s function approach in the subthreshold regime of operation. The exact analytical solution to 2-D Poisson’s equation by Green’s function approach is redefined and Fourier coefficients are calculated correctly that has a direct impact on the outcomes of the model. The approach considers 2-D mixed boundary conditions and multizone techniques while deriving potential equations. It is observed that the Green’s function approach of solving 2-D Poisson’s equation in both oxide and silicon region can accurately predict channel potential, subthreshold current ( ${I} _{{\mathsf {sub}}}$ ), and subthreshold slope of both long and short channel devices designed with higher as well as lower ${t} _{{\mathsf {si}}}/{t} _{{\mathsf {ox}}}$ oxide thickness ratio.