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Observation of a short lifetime layer by buried N/V co-doping in 4H-SiC
Observation of a short lifetime layer by buried N/V co-doping in 4H-SiC
2019
Keisuke Nagaya
Takashi Hirayama
Takeshi Tawara
Koichi Murata
Hidekazu Tsuchida
Masashi Kato
Keywords:
Doping
Optoelectronics
Materials science
short lifetime
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