Light emission from direct bandgap hexagonal SiGe

J.E.M. Haverkort,Y. Ren,A. Dijkstra,Elham M. T. Fadaly,Marcel A. Verheijen,G. Reithmaier,D. Busse,Silvana Botti,J. J. Finley,Erik P. A. M. Bakkers

Light emission from direct bandgap hexagonal SiGe

2018

J.E.M. Haverkort
Y. Ren
A. Dijkstra
Elham M. T. Fadaly
Marcel A. Verheijen
G. Reithmaier
D. Busse
Silvana Botti
J. J. Finley
Erik P. A. M. Bakkers

Hexagonal crystal phase Si 1-x Ge x is a direct bandgap semiconductor for x > 70%. We observe tunable light emission 1.8-3.5 μm at 4K. We observe amplified spontaneous emission as well as coherent light emission for Hex-Ge.

Keywords:

Hexagonal crystal system
Direct and indirect band gaps
Nuclear magnetic resonance
Semiconductor
Materials science
Amplified spontaneous emission
Coherence (physics)
Photoluminescence
Germanium
light emission
Silicon
Optoelectronics
Transmission electron microscopy

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