Electro-optic processes in InGaAs/GaAs quantum wires grown by MBE on patterned substrates

We have investigated the electro-optic properties of strained InGaAs/GaAs quantum wires of lateral width below 20 nm by means of electroluminescence and luminescence under electric bias. A novel room temperature electroluminescence is observed in MBE grown samples. The optical spectra reveal a strong red-shift and the suppression of the luminescence with increasing polarization either under reverse or direct bias. This anomalous Stark shift is due to the combination of the internal piezoelectric field and the external field.