Long wavelength Ce3+ emission in Y6Si3O9N4 phosphors for white-emitting diodes

Abstract Y 6 Si 3 O 9 N 4 :Ce 3+ phosphor was prepared by a solid-state reaction in reductive atmosphere. X-ray powder diffraction (XRD) analysis confirmed the formation of Y 6 Si 3 O 9 N 4 :Ce 3+ . Scanning electron microscopy (SEM) observation indicated that the microstructure of the phosphor consisted of irregular fine grains with an average size of about 5 μm. Photoluminescence (PL) measurements showed that the phosphor can be efficiently excited by near ultraviolet (UV) or blue light excitation, and exhibited bright green emission peaked at about 525 nm. Compared with Ce 3+ -doped Y 4 Si 2 O 7 N 2 phosphors, Ce 3+ -doped Y 6 Si 3 O 9 N 4 phosphors showed longer wavelengths of both excitation and emission. The Y 6 Si 3 O 9 N 4 :Ce 3+ is a potential green-emitting phosphor for white LEDs.