Short-Term Relaxation in HfO x /CeO x Resistive Random Access Memory With Selector

This letter illustrates short-term relaxation in CeO x -based resistive random access memory (RRAM) devices. Our results suggest that the noise of the serial selector device can impact the short-term relaxation, reduce the operating window of the RRAM, and increase the read error. Our findings indicate that the application of longer initial forming pulses can mitigate the short-term relaxation issue.