Silicidation by Rapid Thermal Processing

The development of microelectronics silicon technology in the last decade or so, has been characterized by an impressive trend towards higher complexity and enhanced circuit performance. This was made possible by the use of larger chip areas, but also by a continuous drive towards miniaturization, based upon the classical laws of scaling as introduced by Dennard et al. [1]. In these laws, all device dimensions are reduced by a factor λ, and other parameters are adjusted accordingly.