Analysis of contact recombination at rear local back surface field via boron laser doping and screen-printed aluminum metallization on p-type PERC solar cells

Abstract The passivated emitter and rear cell (PERC) has entered the solar cell market, and it is expected that the amount of PERC production will increase yearly in the future. Improvements in the cell efficiency have a great influence on reducing the cost of power generation. In this study, we focused on the loss of the back surface field (BSF) at the rear side of a PERC, fabricated PERCs having a local BSF including boron diffused by boron laser doping (B-LD), and evaluated this effect. The results from an analysis using scanning electron microscopy (SEM) indicated that the thickness of the BSF fabricated with B-LD was thicker than that of the BSF fabricated without B-LD. The average value of the saturation current density of the metallized area (including BSF) J 0, contact was 554 fA/cm 2 in the PERCs fabricated with B-LD and a dedicated Al paste, and the lowest value achieved was approximately 300 fA/cm 2 . The number of Kirkendall voids for the PERCs fabricated with B-LD decreased in comparison with the PERCs fabricated without B-LD. The PERCs fabricated with B-LD exhibited reduced rear-side recombination.