A Novel Reconfigurable GaN Filter MMIC with Active Reflector

This paper presents a novel reconfigurable GaN (Gallium Nitride) filter MMIC (Microwave Monolithic Integrated Circuit) with an active reflector. The proposed filter consists of the main active filter circuit and active reflector circuit. In this study, active reflector circuit is the same circuit as the main active filter circuit using HEMTs (High Electron Mobility Transistors). Since main active filter circuit has two independent control biases, it indicates only four states. However, the active reflector circuit of the same circuit as the main active filter can increase up to 16 states. Demonstrated reconfigurable filter shows six filter characteristics with respect to the control bias combination. The dual-band characteristics with the low band from 2.4 GHz to 8.9 GHz and the high band from 14.4 GHz to 32.0 GHz were observed. By using these dual-band characteristics, reconfigurable GaN filter MMIC with the active reflector can be used for the concurrent operation of carrier aggregation (CA) in 5G communications.