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In-Situ Synchrotron X-Ray Topography Study on the Stress Relaxation Process in 4H-SiC Homoepitaxial Layers
In-Situ Synchrotron X-Ray Topography Study on the Stress Relaxation Process in 4H-SiC Homoepitaxial Layers
2018
Jianqiu Guo
Tuerxun Ailihumaer
Hongyu Peng
Balaji Raghothamachar
Michael Dudley
Keywords:
Nuclear magnetic resonance
Synchrotron
X-ray
Stress relaxation
Materials science
Analytical chemistry
In situ
Correction
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