Improvement of photoelectrochemical hydrogen generation by surface modification of p-type silicon semiconductor photocathodes

The improvement of H/sub 2/ evolution from two different types of catalytic p-type photocathode surfaces has been examined. p-Type Si has been platinized by phtotelectrochemically plating Pt(0) onto the Si surface. Such a photocathode shows significant improvement (compared to naked p-type Si) for photochemical H/sub 2/ evolution with respect to output photovoltage, fill factor, and overall efficiency. Such photocathodes having an optimun amount of Pt(0) give a pH-dependent output voltage with respect to the H/sub 2/O/H/sub 2/ couple, but the dependence is not a simple 59-mV/pH dependence. No pH dependence would be expected if Pt(0) formed a Schottky barrier when plated onto p-type Si. A second kind of H/sub 2/ evolution catalyst has been confined to the surface of p-type Si. Polymeric quantities of an electroactive N,N'-dialkyl-4,4'-bipridinium reagent, (PQ/sup 2 +/.)/sub n/, have been confined to the surface. The Br/sup -/ counterions of the polymer are then exchanged by PtCl/sub 6//sup 2 -/. Photoreduction then yields Pt(0) dispersed in the polymer. Such a surface is again significantly improved compared to naked p-type Si with respect to H/sub 2/ evolution. A comparison of the naked p-Si, the simply platinized, and the (PQ/sup 2 +//sup ///sup +//sub n/.nPt(0))/sub surf./ system is mademore » and contrasted to the expected behavior of an external Schottky barrier photocell driving an electrolysis cell with a Pt cathode. Experiments with n-type MoS/sub 2/, n-type Si, Pt, Au, and W cathodes functionalized with the (PQ/sup 2 +//sup ///sup +/.)sub n/.nPt(0))/sub surf./ system compared to the same surface directly platinized confirm an important difference in the mechanism of H/sub 2/ evolution catalysis for the two surface catalyst systems. p-Type Si modified with optimum amounts of Pt(0) by direct platinization appears to give improved H/sub 2/ evolution efficiency by a mechanism where the Pt(0) serves as a catalyst that does not alter the interface energetics of the semiconductor.« less