Influence of ion implantation and electron pre-irradiation on charging of dielectrics under electron beam irradiation: Application to SiO2

Abstract We present the experimental study on the effect of preliminary ion and electron irradiation on charging kinetics of SiO 2 (quartz) under medium-energy electron beam. It is shown that the charging kinetics differs for SiO 2 samples implanted by ions of various chemical natures and by electrons of different energy. It is found the enhancement of charge spreading over the quartz surface pre-irradiated by electrons as a result of desorption of oxygen atoms from the surface. The charging surface potential under electron beam increases more slowly, but to higher values, than in the case of non-irradiated crystals. The observed difference of the steady state values of charging surface potential as a function of incident electron energy is explained for the case of proton pre-irradiated targets.