Room temperature deposition of alumina-doped zinc oxide on flexible substrates by direct pulsed laser recrystallization

In this study, a method combining room temperature pulsed laser deposition (PLD) and direct pulsed laser recrystallization (DPLR) is introduced to deposit transparent conductive oxide (TCO) layer on low melting point flexible substrates. Alumina-doped zinc oxide (AZO), as one of the most promising TCO candidates, has now been widely used in solar cells. However, to achieve optimal, electrical, and optical properties of AZO on low melting point, flexible substrate is challenging. DPLR technique is a scalable, economic, and fast process to remove crystal defects and generate recrystallization at room temperature. It features selective processing by only heating up the TCO thin film and preserve the underlying substrate at low temperature. In this study, AZO thin film is pre-deposited by PLD on flexible and rigid substrates. DPLR is then introduced to achieve a uniform TCO layer on these substrates, i.e., commercialized Kapton polyimide film, micron-thick Al-foil, and sold lime glass (SLG). Both finite eleme...