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Molecular beam deposition of LaLuO 3 thin films with high dielectric constant and low leakage current
Molecular beam deposition of LaLuO 3 thin films with high dielectric constant and low leakage current
2008
J.M.J. Lopes
U. Littmark
M. Roeckerath
St. Lenk
J. Schubert
S. Mantl
Keywords:
Capacitance
Dielectric
Thin film
Molecular beam epitaxy
Deposition (phase transition)
Optoelectronics
Electric current
Epitaxy
High-κ dielectric
Materials science
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