Self-Matching SRAM With Embedded OTP Cells in Nanoscale Logic CMOS Technologies
2014
This paper reports a new static RAM (SRAM) cell featuring its self-matching characteristic for enhanced static noise margin (SNM) in low-voltage applications. This new SRAM employs trimming devices replacing pull-down transistors to compensate mismatches. Through a blanket trimming operation enabling self-matching of the two branches, effective suppression of variability with improved SNM distribution has been successfully demonstrated in nanoscaled SRAMs.
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