Analysis of Pentacene Field-Effect Transistor with a Ferroelectric P(VDF–TeFE) Gate Insulator as an Element of Maxwell–Wagner Effect System

Analysis of pentacene field-effect transistors (FETs) with a ferroelectric gate insulator, i.e., a copolymer of vinylidene fluoride and tetrafluoroethylene [P(VDF–TeFE)], as an element of Maxwell–Wagner system revealed that the turnover of spontaneous polarization in P(VDF–TeFE) modulated the amount of charge injected from the source electrode and accumulated in the FET channel. This analysis well accounted for the hysteresis behavior observed in the Ids–Vgs characteristics. Pentacene FETs using polyimide gate insulator also showed a similar hysteresis behavior in the Ids–Vgs characteristics, but that the results were caused by carrier injection from the gate electrode into the polyimide gate insulator. # 2009 The Japan Society of Applied Physics