CuxO resistance memory device preparation and copper wiring technique integration method

The present invention relates to a method integrating CuxO resistance accumulator production and copper interconnection technique belonging to the technical field of microelectronics, which includes procedures below: A cupric compound medium layer formed on CuxO storage medium is utilized as a mask or the CuxO storage medium is adopted as the mask. It is necessary to etch off a capping layer on copper unneeded for forming storage medium. The cupric compound medium layer formed on the CuxO storage medium is a medium layer capable of conducting selective etching with the capping layer and can be CuO, CuxN or CuON with x more than 1 but not less than or equal to 2. Plasma oxidation or thermal oxidation is suitable for forming CuxO storage medium. The present invention has the advantages of simple technique, lower cost and good effect.