Characteristics of transparent dielectric in PbO-B $_2$ O $_3$ - ${SiO_2}-{Al_2}{O_3}$ system and investigation of reaction between dielectric and electrode(ITO)

, system was investigated for optical, thermal and electrical properties of transparent dielectric. We also studied the reaction between transparent dielectric and transparent electrode(Indium Tin Oxide, ITO) during firing. For the evaluation of properties, dielectrics were prepared under the conditions fired at 520~58 with 12 thickness. In the reaction between dielectrics and electrode(ITO), In ions diffused into dielectric layer, while Sn ion diffusion was not observed. The coefficient of thermal expansion, the dielectric constant, the glass transition temperature and the transmittance of the dielectric were greatly dependent on PbO content. The increase of the coefficient of thermal expansion and the dielectric constant were monitored by increasing PbO, while the glass transition temperature and the transmittance were decreased. With the increased ratio, the coefficient of thermal expansion and the transmittance were decreased, while the dielectric constant was increased. The glass transition temperature did not change significantly.