Bipolar resistive switching effect in Gd2O3 films for transparent memory application

A transparent resistive random access memory based on ITO/Gd"2O"3/ITO capacitor structure is fabricated on glass substrate. The transparent memory exhibits reliable resistive switching for more than 1000 cycles, low operation voltage of -2V/+2V, and highly transmittance above 80% for visible light. From the TEM and XPS analysis, the asymmetry of the interfacial layer thickness is responsible for the asymmetric switching properties. The transitional multi-valance states of the bottom interfacial layer can serve as oxygen reservoir for oxygen migration back and forth under different polarity of applied bias. This work presents a candidate material Gd"2O"3 for the application on the T-RRAM devices.