Next generation metallization technique for IC package application

IC package substrates are normally fabricated by semi-additive process (SAP) for high-density packaging. Dow's brand new Ni-free electroless copper chemistry developed for SAP offers new solutions for the future fine pattern design to IC substrate production. The new developed chemistry shows high productivity (0.6um/20min) and peel strength (over 0.5kN/m on 100nm roughness) and improved micro via holes (MVH) uniform deposition with no Cu-Cu connection defects.