A highly robust fast recovery super-junction power transistor and a method for preparing a semiconductor

Superjunction power semiconductor transistor and a method of producing an highly robust fast recovery. Containing N-type drain transistor, N type epitaxial layer is provided on the N-type drain, and then the first set, two shaped P-type body region, a first P-type body region, P-type first body region provided with at least two grooves the gate, the heavily doped N-type source and a second P-type body region, a field oxide layer is provided at the upper end of the trench gate, the heavily doped N-type source located in an upper portion of the first P-type body region in the trenches and limits between the gate, the second P-type heavily doped body region located below the N-type source and connected through a first metal contact with the source metal layer. The growth substrate is N-type epitaxial layer, a deep trench etch, making the first, second strip P type body region, and then making the trench gate, the first P-type body region, a heavily doped N-type source, and deposited aluminum forming source metal layer and a second contact metal, and finally making N-type drain. The present invention can improve the body diode reverse recovery characteristics and can improve the reliability of the device.