New sulfonyl diazomethane compounds, photoacid generator, and a resist material and a patterning process using the same.

PROBLEM TO BE SOLVED: To afford high resolution with good pattern profile design after development and therefore suitable for fine processing. SOLUTION: A sulfonyl diazomethane shown by general formula (1) [wherein, R is H, a 1-4C straight-chain, branched or cyclic (substituted) alkyl or alkoxy; G is SO 2 or CO; R 3 is a 1-10C straight-chain, branched or cyclic (substituted) alkyl or 6-14C (substituted) aryl; p is 1 or 2; q is 0 or 1, (p+q) is 2, n is 0 or 1; m is an integer of 3-11; and k is an integer of 0-4] is provided. COPYRIGHT: (C)2003,JPO