1.55 μm buried ridge stripe laser diodes grown by gas source molecular beam epitaxy

Abstract Buried ridge stripe lasers have been grown on InP in two steps by gas source molecular beam epitaxy. The active structure consists of a compressively strained layer multi quantum well with an equivalent wavelength emission at 1.5 μm. The stripe was defined by reactive ion etching. A threshold current of 22 mA was reproducibly obtained on a laser length of 500 μm. A CW output power of 48 mW per facet was achieved. In addition, preliminary accelerated aging tests have shown the high reliability of the structure.