Semiconductor dveice and method of manufacturing the same

2016 
Semiconductor device and is provided a method of manufacturing the same. Semiconductor device around the cell area and, on the surrounding the cell region is the background region, and the cell region, as defined by the device isolation film, a plurality of the active pattern, the cell range extending in a first direction defined on the substrate comprising a background pattern filling the background region so as to surround the plurality of the active pattern, from the edges and choein contact with the first active pattern, said first active pattern in the cell region, the second direction crossing the first direction, and spaced, and a second active pattern to the background area and the spacing
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