Extrinsic conductivity of Hg{sub 3}In{sub 2}Te{sub 6} single crystals

n-Hg{sub 3}In{sub 2}Te{sub 6} single crystals with resistivity of 1-2 {omega} cm used in photodiodes for the wavelength 1.55 {mu}m are studied. It is shown that electrical conductivity of the material is controlled by donors of two types with ionization energies of 0.063 and 0.18 eV, while the mobility of charge carriers is predominantly controlled by scattering at charged centers. On the basis of the electroneutrality equation, a quantitative description of the observed temperature dependence of the electron concentration in the temperature range from 100 to 370 K is obtained.