Crystallization study of “melt quenched” amorphous GeTe by transmission electron microscopy for phase change memory applications
2011
In situ transmission electron microscopy (TEM) observations were performed for a better understanding of the “melt quenched” GeTe crystallization mechanism. The evolution of the crystallite morphology observed during annealing shows a growth-dominated crystallization behavior. Scanning transmission electron microscopy—electron dispersive x-ray spectroscopy and high resolution electron microscopy experiments were also performed on cycled GeTe devices, showing that void formation is responsible for the cell failure after 107 cycles.
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