Vapour pressure measurement of low volatility precursors

The introduction of new chemicals into semiconductor production processes is an expensive, time consuming exercise. A key parameter required to ensure equipment set up is well suited to the source from the outset of trials is reliable precursor volatility data. In this paper we present details of a newly commissioned vapour pressure (VP) measurement system and latest vapour pressure values for the technologically interesting Hf and Ta precursors pentakis(dimethylamido)tantalum (PDMAT) and tetrakis(ethylmethylamido)hafnium (TEMAH). Calibration data is also presented to illustrate the accuracy of the equipment.