Process for manufacturing a submillimeter electroconductive grid, submillimeter electroconductive grid

The invention relates to the manufacture of a submillimeter gate comprising: - the realization of a mask (1) to sub-millimeter openings (10), said pattern mask on the main surface, from a colloidal solution of nanoparticles with a glass transition temperature Tg given, drying of the masking layer to a temperature below Tg, - forming the gate electrocondutrice from the network mask (1) comprising in this order: a deposit of at least an electrically conductive material, said grid, electrical resistivity less than 10 ohm.cm, a removal of the masking layer, revealing the mother grid eventual deposition, electrodeposition of an electroconductive material, said overgrid (6) the underlying surface to the grid parent then being dielectric, -a detachment of said gate mother or overgrid, of a thickness of at least 500 nm the invention also relates to the grid stained