RTN and low frequency noise on ultra-scaled near-ballistic Ge nanowire nMOSFETs

In this work, we present the first observation of random telegraph noise (RTN) in ultra-scaled Ge nanowire (NW) nMOSFETs. The impacts of NW geometry, channel length, EOT, and channel doping on low frequency noise are studied comprehensively. It is confirmed that the low frequency noise with 1/f characteristics is attributed to the mobility fluctuation in ultra-scaled Ge NW nMOSFETs. The low frequency noise decreases when the channel length scales down from 80 nm to 40 nm because of the near-ballistic transport of electrons.