Processing and Electric Field Dependent Dielectric Properties of KTa0.6Nb0.4O3 Thin Films on Alumina

KTa 0.6 Nb 0.4 O 3 thin films on polycrystalline alumina were prepared by Chemical Solution Deposition from potassium acetate and transition metal alkoxides in 2-methoxyethanol. Influence of the reflux time on the phase composition, microstructure, and dielectric properties of the films was studied. Films, prepared from the 1 h-refluxed solutions and heated at 900°C have dielectric permittivity value of 860, dielectric losses value of 0.01 and tunability (C 0V / C 30V ) value of 1.9. The corresponding values for the films, prepared from the 24 h-refluxed solutions, are 1690, 0.04, and 2.6, respectively.