X-ray diffraction imaging of wide bandgap materials
2003
We discuss the interpretation of images of /spl alpha/-SiC substrates and GaN layers deposited on SiC using two common variants of diffraction imaging: double crystal (reflection) topography and Lang (transmission) topography. Dependence of image resolution on layer rocking curve breadth is demonstrated, and implication for limitations imposed by thin and defective layers are discussed.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
0
References
1
Citations
NaN
KQI