New indexes of the 0.5-μm resolution resist for optical lithography

New indexes to evaluate and simulate the resolution power of the UV resists based on the dissolution rate curve as it relates to local inhibitor concentration are proposed. Optical parameters and the dissolution rate curve of commercially available resists were measured and studied to show their effect on the resolution power. The optical parameters A B and C had very little effect on the resolution power while the dissolution rate curve greatly effected the resolution power. Two indexes are extracted from the dissolution rate curve. One is the contrast of the dissolution rate and the other is the range of the dissolution rate. By using these indexes the resolution power can be easily described. The indexes of an imaginary resist required for a 0. 5. tm process is shown. 1 .