The temperature dependence studies of rare-earth (Dy3+, Sm3+, Eu3+ and Tb3+) activated Gd3Ga3Al2O12 garnet single crystals

Abstract The luminescence properties of the Dy 3+ , Sm 3+ , Eu 3+ and Tb 3+ activated Gd 3 Ga 3 Al 2 O 12 (GGAG) single crystals were investigated as a function of temperature. The photoluminescence excitation, emission and decay kinetic analysis revealed an efficient energy transfer from Gd 3+ ions towards all the Dy 3+ , Sm 3+ , Eu 3+ and Tb 3+ activators. The intensity ratio between electric dipole and magnetic dipole emission transitions in activator׳s ions suggested a high homogeneity of the host lattice grown by Czochralski technique. Only the Gd 3 Ga 3 Al 2 O 12 single crystal activated with Dy 3+ ions exhibited a stable luminescence up to 800 K. The Sm 3+ , Eu 3+ and Tb 3+ doped Gd 3 Ga 3 Al 2 O 12 single crystals showed the onset of the thermal quenching of luminescence at lower temperatures. We proposed three different models, very well-known from the literature, to explain the mechanisms responsible for thermal quenching of activator׳s luminescence in Gd 3 Ga 3 Al 2 O 12 single crystal.