Manufacturing process of cross-torque array-type magnetic random memory

The invention provides a manufacturing process of a cross-torque array-type magnetic random memory. The process comprises the steps of: forming a bottom electrode; forming a magnetic memory unit array on the top part of the bottom electrode, wherein a plurality of layers of films are prepared to form a magnetic tunnel junction and a conductive layer 1/oxide/conductive layer 2 three-layer structure which are connected in series, the oxide of the conductive layer 1/oxide/conductive layer 2 three-layer structure is a metal oxide or an oxide of a semiconductor material, and the conductive layer 1 and/or the conductively layer 2 of the conductive layer 1/oxide/conductive layer 2 three-layer structure is metal, a metal alloy, a metal nitride or a metal boride; and forming a top electrode on the top part of the magnetic memory unit array. According to the invention, the production process of the MRAM is substantially simplified, the cost is lowered, and the integration of a storage chip is greatly improved especially of a pSTT-MAR product.