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Complete re-estimation of the gate leakage current limit for sub-0.12um technologies (EOT= 1.8-2.8nm)
Complete re-estimation of the gate leakage current limit for sub-0.12um technologies (EOT= 1.8-2.8nm)
2000
M. Bidaud
F. Arnaud
Jean-Luc Autran
K. Barla
Keywords:
Materials science
Leakage (electronics)
Electronic engineering
CMOS
Quantum tunnelling
Current density
Threshold voltage
gate leakage current
Correction
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