High permittivity gate insulators TiO/sub 2/ and ZrO/sub 2/

Polycrystalline films of TiO/sub 2/ and ZrO/sub 2/ have been deposited from their respective tetranitrato precursors. Film microstructure has been examined. The leakage current depends on the process conditions, and particularly on a post deposition hydrogen anneal. An interfacial layer leads to a lower than expected capacitance. This layer is believed to be due to silicon oxidation in ZrO/sub 2/ and silicate formation in TiO/sub 2/.