Improved interface and electrical properties of atomic layer deposited Al2O3/4H-SiC
2018
In this paper we demonstrate a process optimization of atomic layer deposited Al2O3 on 4H-SiC resulting in an improved interface and electrical properties. For this purpose the samples have been tr ...
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
49
References
7
Citations
NaN
KQI