Analysis of Electrical Characteristics of Through Silicon Via in 3D Integration

The electrical characteristics of through silicon vias(TSVs) interconnect technology,which emerged as one of the key technologies in 3D integration package,are analyzed.Brief background of TSV technology is given.Then,a 2-tier ground-signal-ground TSV(GSG-TSV) is investigated in time domain and frequency domain using 3D full wave field solver.And the TDR impedance is shown as well as TDR/TDT signals.At last,the impact of physical configurations and materials on TSV electrical performance is evaluated and analyzed in details.From these preliminary results,S21 in a network could be improved and the performance of 3D circuits and systems would be enhanced. TSV;3D integration;TDR/TDT;time domain;physical configurations;conductivity;electrical performance