Preparation of TiSi nanowires by APCVD used for improving dielectric properties of PST thin film

Abstract Nanoelectrode of conductive TiSi nanowires with Ti 5 Si 3 conductive bottom layer underneath is prepared on glass substrate by atmosphere pressure chemical vapor deposition (APCVD) method. Pb 0.4 Sr 0.6 (Ti 0.97 Mg 0.03 ) O 2.97 (PST) thin film is deposited on the nanoelectrode by rf-sputtering method. The morphology and phase structure of the nanoelectrode are measured by FE-SEM and XRD, respectively. The dielectric property of a PST thin film deposited on the nanoelectrode substrate is obtained by Agilent 4294A Impedance Analyzer. The results show that the conductive Ti 5 Si 3 crystalline phase bottom layer is formed at deposition temperature above 710 °C, and the conductive TiSi single crystal nanowires are formed on the bottom layer perfectly in this case. By using the substrate on which the TiSi nanowire planted Ti 5 Si 3 electrode is prepared, the PST thin film is deposited and it exhibits the high tunability of approximately 61% which is much higher than that deposited on the Ti 5 Si 3 coated glass substrates without TiSi nanowires.