In-Situ Fabrication of Gate Oxide and Poly-Si Film by XeCl Excimer Laser Annealing

We have proposed a new method to form the gate oxide and recrystallize the polycrystalline silicon (poly-Si) active layer simultaneously. During the irradiation of excimer laser, the poly-Si film is recrystallized while the oxygen ion impurities, which are injected into the amorphous silicon (a-Si) film, are activated by laser energy and react with silicon atoms to form SiO2. Our experimental results show that a high quality oxide, a poly-Si film with fine grain, and a smooth and clean interface between oxide and poly-Si film have been successfully obtained by the proposed fabrication method. The maximum oxide breakdown electric field which exceeds 7 MV/cm is obtained.