Old Web
English
Sign In
Acemap
>
Paper
>
Estimation of overheating of p-n junction and its effect on degradation of silicon high-power pulse impatt diodes
Estimation of overheating of p-n junction and its effect on degradation of silicon high-power pulse impatt diodes
2010
Belyaev
Basanets
Boltovets
Zorenko
Konakova
Kolesnik
Kudryk
Milenin
Ataubaeva
Keywords:
Optoelectronics
Annealing (metallurgy)
p–n junction
Diode
degradation
Pulse (signal processing)
overheating
Silicon
Materials science
Pulse duration
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]