SIMS analysis of CH/sub 4/-ECR-plasma-irradiated GaInAsP/InP for low surface recombination in micro light emitters

We confirmed the reduction in surface recombination of 1.55-/spl mu/m-GaInAsP/InP micro light emitters by the CH/sub 4/-ECR-plasma irradiation. The SIMS analysis suggested that this effect was provided by shallowly implanted C, which possibly formed a deep level that electrically insulates near the surface.